鈥?/div>
High Current Capability : I
C
= -15A
High Power Dissipation
Wide S.O.A
Complement to KSC4468
1
TO-3P
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Ratings
-160
-140
-6
-8
-16
80
150
- 55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
F
t
STG
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Fall Time
Storage Time
Test Condition
I
C
=-5mA, I
E
=0
I
C
=-10mA, R
BE
=鈭?/div>
I
E
=-5mA, I
C
=0
V
CB
=-80V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-5V, I
C
=-1A
V
CE
=-5V, I
C
=-6A
I
C
=-5A, I
B
=-0.5A
V
CE
=-5V, I
C
=-1A
V
CE
=-5V, I
C
=-1A
V
CB
=-10V, f=1MHz
V
CC
=-20V,
I
C
= 1A = 10I
B1
= -10I
B2
R
L
= 20鈩?/div>
30
300
0.25
0.53
1.61
60
20
-2.5
-1.5
V
V
MHz
pF
碌s
碌s
碌s
Min.
-160
-140
-6
-0.1
-0.1
200
Typ.
Max.
Units
V
V
V
mA
mA
* Pulse Test : PW=20us
*h
FE
Classification
Classification
h
FE1
O
60 ~ 120
Y
100 ~ 200
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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