KSA1625
KSA1625
High Voltage Switch
鈥?High Breakdown Voltage
鈥?High Speed Switching
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
I
CP
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current (DC)
Collector Current (Pulse)
Collector Power Dissipation (T
a
=25擄C)
Collector Power Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Ratings
-400
-400
-7
-0.25
-0.5
-1.0
0.75
2
150
-55 ~ 150
Units
V
V
V
A
A
A
W
W
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Dc Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= -1mA, I
B
=0
V
CB
= -400V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -5V, I
C
= -50mA
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -10V, I
C
= -10mA
V
CB
= -10V, f=1MHz
I
C
= -100mA, R
L
=1.5k鈩?/div>
I
B1
=- I
B2
= -10mA
V
CC
= -150V
10
25
1
5
1
40
Min.
-400
Max.
-1
-1
200
-1
-1.2
V
V
MHz
pF
碌s
碌s
碌s
Units
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classification
Classification
h
FE
M
40 ~ 80
L
60 ~ 120
K
100 ~ 200
漏2002 Fairchild Semiconductor Corporation
Rev. A2, June 2002
1
2
3
4
