KSA1406
KSA1406
CRT Display, Video Output
鈥?High Current Gain Bandwidth Product : f
T
= 400MHz (Typ.)
鈥?High Collector-Base Breakdown Voltage : V
CBO
= -200V
鈥?Low Reverse Transfer Capacitance : C
re
=1.7pF (Typ.)
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Ratings
- 200
- 200
-4
- 100
- 200
1.2
7
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(Sat)
V
BE
(Sat)
f
T
C
ob
C
re
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Test Condition
I
C
= - 10碌A, I
B
= 0
I
C
= - 1mA, R
BE
=鈭?/div>
I
E
= - 100碌A, I
C
= 0
V
CB
= - 150V, I
C
= 0
V
BE
= - 2V, I
E
= 0
V
CE
= - 10V, I
C
= - 10mA
V
CE
= - 10V, I
C
= - 60mA
I
C
= - 30mA, I
C
= - 3mA
I
C
= - 30mA, I
C
= - 3mA
V
CE
= - 30V, I
C
= - 30mA
V
CB
= - 30V, f = 1MHz
V
CB
= - 30V, f = 1MHz
400
2.3
1.7
40
20
Min.
- 200
- 200
-4
- 0.1
- 0.1
120
- 0.8
- 1.8
V
V
MHz
pF
pF
Typ.
Max.
Units
V
V
V
碌A
碌A
* h
FE
Classification
Classification
h
FE1
C
40 ~ 80
D
60 ~ 120
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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