KSA1381
KSA1381
CRT Display, Video Output
鈥?High Collector-Emitter Breakdown Voltage : V
CEO
= -300V
鈥?Low Reverse Transfer Capacitance : C
re
= 2.3pF at V
CB
= -30V
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Ratings
- 300
- 300
-5
- 100
- 200
7
1.2
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
C
re
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Test Condition
I
C
= - 10碌A(chǔ), I
E
= 0
I
C
= - 1mA, I
B
= 0
I
E
= - 10碌A(chǔ), I
C
= 0
V
CB
= - 200V, I
E
= 0
V
EB
= - 4V, I
C
= 0
V
CE
= - 10V, I
C
= - 10mA
I
C
= - 20mA, I
B
= - 2mA
I
C
= - 20mA, I
B
= - 2mA
V
CE
= - 30V, I
C
= - 10mA
V
CB
= - 30V, f = 1MHz
V
CB
= - 30V, f = 1MHz
150
3.1
2.3
40
Min.
- 300
- 300
-5
- 0.1
- 0.1
320
- 0.6
-1
V
V
MHz
pF
pF
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classification
Classification
h
FE
C
40 ~ 80
D
60 ~ 120
E
100 ~ 200
F
160 ~ 320
漏2000 Fairchild Semiconductor International
Rev. A, February 2000