KSA1243
KSA1243
Power Amplifier Applications
鈥?Complement to KSC3073
1
I-PACK
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Ratings
- 30
- 30
-5
- 0.6
-3
1
10
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= - 10mA, I
B
= 0
I
E
= - 1mA, I
C
= 0
V
CB
= - 20V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 0.5A
V
CE
= - 2V, I
C
= - 2.5A
I
C
= - 2A, I
B
= - 0.2A
V
CE
= - 2V, I
C
= - 0.5A
V
CE
= - 2V, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
70
25
- 0.3
- 0.75
100
40
Min.
- 30
-5
-1
-1
240
- 0.8
-1
V
V
MHz
pF
Typ.
Max.
Units
V
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classification
Classification
h
FE1
O
70 ~ 140
Y
120 ~ 240
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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