KSA1242
KSA1242
Medium Power Amplifier
Camera Flash Applications
鈥?h
FE
= 100~320 (V
CE
= -2V, I
C
= -0.5V)
鈥?h
FE
= 70 (Min.) (V
CE
= -2V, I
C
= -4A)
鈥?Low Saturation Voltage: V
CE
(sat) = -1V (Max.)
1
I-PAK
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Ratings
- 35
- 20
-8
-5
-8
10
150
- 55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector Output Capacitance
Test Condition
I
C
= - 10mA, I
B
= 0
I
E
= - 1mA, I
C
= 0
V
CB
= - 35V, I
E
= 0
V
EB
= - 8V, I
C
= 0
V
CE
= - 2V, I
C
= - 0.5A
V
CE
= - 2V, I
C
= - 4A
I
C
= - 4A, I
B
= - 0.1A
V
CE
= - 2V, I
C
= - 4A
V
CE
= - 2V, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
180
50
100
70
Min.
- 20
-8
- 100
- 100
320
-1
- 1.5
V
V
MHz
pF
Typ.
Max.
Units
V
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classification
Classification
h
FE1
O
100 ~ 200
Y
160 ~ 320
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001