KSA1203
KSA1203
Low Frequency Power Amplifier
鈥?3W Output application
鈥?Collector Power Dissipation P
C
=1~2W : Mounted on Ceramic Board
鈥?Complement to KSC2883
1
SOT-89
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-30
-30
-5
-1.5
-0.3
500
1,000
150
-55 ~ 150
Units
V
V
V
A
A
mW
mW
擄C
擄C
* Mounted on Ceramic Board (250mm2
脳
0.8mm)
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -10mA, I
B
=0
I
E
= -1mA, I
C
=0
V
CB
= -30V, I
E
=0
V
BE
= -5V, I
C
=0
V
CE
= -2V, I
C
= -500mA
I
C
= -1.5A, I
B
= -30mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -500mA
V
CB
= -10V, I
E
=0, f=1MHz
120
50
100
Min.
-30
-5
-100
-100
320
-2.0
-1.0
V
V
MHz
pF
Typ.
Max.
Units
V
V
nA
nA
h
FE
Classification
Classification
h
FE
O
100 ~ 200
Marking
Y
160 ~ 320
SGX
h
FE
grade
漏2004 Fairchild Semiconductor Corporation
Rev. A3, June 2004