鈥?/div>
Collector-Emitter Voltage: V
CEO
= -120V
f
T
=120MHz
Collector Power Dissipation P
C
=1~2W : Mounted on Ceramic Board
Complement to KSC2881
1
SOT-89
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
J
T
STG
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-120
-120
-5
-800
-160
500
1,000
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
mW
擄C
擄C
* Mounted on Ceramic Board (250mm2 x 0.8mm)
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -10mA, I
B
=0
I
E
= -1mA, I
C
=0
V
CB
= -120V, I
E
=0
V
BE
= -5V, I
C
=0
V
CE
= -5V, I
C
= -100mA
I
C
= -500mA, I
B
=-50mA
V
CE
= -5V, I
C
= -500mA
V
CE
= -5V, I
C
= -100mA
V
CB
= -10V, I
E
=0, f=1MHz
120
30
80
Min.
-120
-5
-100
-100
240
-1.0
-1.0
V
V
MHz
pF
Typ.
Max.
Units
V
V
nA
nA
h
FE
Classification
Classification
h
FE
O
80 ~ 160
Marking
Y
120 ~ 240
SDX
h
FE
grade
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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