KSA1142
KSA1142
Audio Frequency Power Amplifier
High Freqency Power Amplifier
鈥?Complement to KSC2682
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Ratings
- 180
- 180
-5
- 100
1.2
8
150
- 55 ~ 150
Units
V
V
V
mA
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
V
CB
= - 180V, I
E
= 0
V
EB
= - 3V, I
C
= 0
V
CE
= - 5V, I
C
= - 1mA
V
CE
= - 5V, I
C
= - 10mA
I
C
= - 50mA, I
B
= - 5mA
I
C
= - 50mA, I
B
= - 5mA
V
CE
= - 10V, I
C
= - 20mA
V
CB
= - 10V, I
E
= 0, f=1MHz
V
CE
= - 10V, I
C
= - 1mA
R
S
= 10k鈩? f = 1MHz
90
100
200
200
- 0.16
- 0.8
180
4.5
4
7
Min.
Typ.
Max.
-1
-1
320
- 0.5
- 1.5
V
V
MHz
pF
dB
Units
碌A(chǔ)
碌A(chǔ)
* Pulse Test: PW鈮?50碌s, Duty Cycle鈮?% Pulsed
h
FE
Classification
Classification
h
FE2
O
100 ~ 200
Y
160 ~ 320
漏2000 Fairchild Semiconductor International
Rev. A, February 2000