SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRC660E~KRC664E
EPITAXIAL PLANAR NPN TRANSISTOR
B
FEATURES
With Built-in Bias Resistors.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
A1
A
C
B1
Simplify Circuit Design.
1
5
DIM
A
A1
B
2
3
4
EQUIVALENT CIRCUIT
C
B
R1
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
H
P
P
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_
1.6 + 0.05
_ 0.05
1.2+
0.50
_
0.2 + 0.05
_ 0.05
0.5 +
_
0.12 + 0.05
5
C
Q1
Q2
E
1
2
3
1. Q
1
IN (BASE)
2. Q
1
, Q
2
COMMON (EMITTER)
3. Q
2
IN (BASE)
4. Q
2
OUT (COLLECTOR)
5. Q
1
OUT (COLLECTOR)
TESV
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
50
50
5
100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
SYMBOL
P
C
*
T
j
T
stg
RATING
200
150
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC660E
KRC661E
Input Resistor
KRC662E
KRC663E
KRC664E
Note : * Characteristic of Transistor Only.
R
1
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
*
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
MIN.
-
-
120
-
-
-
-
-
-
-
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
Type Name
4
J
D
MAX.
100
100
-
0.3
-
-
-
-
-
-
UNIT
nA
nA
V
MHz
k
Marking
5
MARK SPEC
TYPE
MARK
KRC660E
NK
KRC661E
NM
KRC662E
NN
KRC663E
NO
KRC664E
NP
1
2
3
2002. 7. 10
Revision No : 3
1/4
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2
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