SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
A1
KRA760E~KRA764E
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
Simplify Circuit Design.
A
C
1
6
5
2
3
4
EQUIVALENT CIRCUIT
C
B
R1
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
H
P
P
DIM
A
A1
B
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_ 0.05
1.6 +
_
1.2 + 0.05
0.50
_
0.2 + 0.05
_
0.5 + 0.05
_
0.12 + 0.05
5
C
Q1
Q2
1.
2.
3.
4.
5.
6.
Q
1
Q
1
Q
2
Q
2
Q
2
Q
1
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
E
1
2
3
TES6
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
-50
-50
-5
-100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage TemperatureRange
* Total Rating.
SYMBOL
P
C
*
T
j
T
stg
RATING
200
150
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRA760E
KRA761E
Input Resistor
KRA762E
KRA763E
KRA764E
Note : * Characteristic of Transistor Only.
R
1
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
*
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-1mA
I
C
=-10mA, I
B
=-0.5mA
V
CE
=-10V, I
C
=-5mA
MIN.
-
-
120
-
-
-
-
-
-
-
TYP.
-
-
-
-0.1
250
4.7
10
100
22
47
Type Name
5
4
J
D
MAX.
-100
-100
-
-0.3
-
-
-
-
-
-
UNIT
nA
nA
V
MHz
k
Marking
6
MARK SPEC
TYPE
MARK
KRA760E
PK
KRA761E
PM
KRA762E
PN
KRA763E
PO
KRA764E
PP
1
2
3
2002. 7. 9
Revision No : 2
1/4
1
2
3
4
