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KM718V089 Datasheet

  • KM718V089

  • 512Kx36 & 1Mx18 Synchronous SRAM

  • 20頁

  • SAMSUNG   SAMSUNG

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KM736V989
KM718V089
Document Title
512Kx36 & 1Mx18 Synchronous SRAM
512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
0.0
0.1
0.2
History
Initial draft
1. Update ICC & ISB values.
1. Change I
SB
value from 150mA to 110mA at -67.
2. Change I
SB
value from 130mA to 90mA at -72 .
3. Change I
SB
value from 120mA to 80mA at -10 .
1. Add tCYC 167MHz and 183MHz.
2. Changed DC condition at Icc and parameters
Icc ; from 420mA to 400mA at -67,
from 400mA to 380mA at -72,
from 350mA to 320mA at -10,
1. Final Spec Release.
Draft Date
Dec. 29. 1998
May. 27. 1999
Sep. 04. 1999
Remark
Preliminary
Preliminary
Preliminary
0.3
Nov. 19. 1999
Preliminary
1.0
Dec. 08. 1999
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
December 1999
Rev 1.0

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