KM48C8004B, KM48C8104B
CMOS DRAM
8M x 8bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), package type (SOJ or TSOP-
II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
This 8Mx8 EDO Mode DRAM family is fabricated using Samsung鈥瞫 advanced CMOS process to realize high band-width, low power con-
sumption and high reliability.
FEATURES
鈥?Part Identification
- KM48C8004B(5.0V, 8K Ref.)
- KM48C8104B(5.0V, 4K Ref.)
鈥?/div>
Active Power Dissipation
Unit : mW
Speed
-45
-5
-6
鈥?/div>
Refresh Cycles
Part
NO.
KM48C8004B*
KM48C8104B
8K
550
495
440
Refresh
cycle
8K
4K
4K
715
660
605
Refresh time
Normal
64ms
RAS
CAS
W
鈥?Extended Data Out Mode operation
鈥?CAS-before-RAS refresh capability
鈥?RAS-only and Hidden refresh capability
鈥?Fast parallel test mode capability
鈥?TTL(5.0V) compatible inputs and outputs
鈥?Early Write or output enable controlled write
鈥?JEDEC Standard pinout
鈥?Available in Plastic SOJ and TSOP(II) packages
鈥?+5.0V鹵10% power supply
FUNCTIONAL BLOCK DIAGRAM
Control
Clocks
Vcc
Vss
VBB Generator
Refresh Control
Refresh Counter
Memory Array
8,388,608 x 8
Cells
Sense Amps & I/O
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
鈥?/div>
Performance Range
Speed
-45
-5
-6
Refresh Timer
Row Decoder
Data in
Buffer
DQ0
to
DQ7
Data out
Buffer
OE
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
74ns
84ns
104ns
t
HPC
17ns
20ns
25ns
A0~A12
(A0~A11)*1
A0~A9
(A0~A10)*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
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