KM41C4000D Datasheet

IC型號：
KM41C4000D
PDF描述：
4M x 1Bit CMOS Dynamic RAM with Fast Page Mode
文件大小：
342.30KB
PDF頁數(shù)：
20頁
芯片廠家：
SAMSUNG

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KM41C4000D, KM41V4000D

CMOS DRAM

4M x 1Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells

within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and

package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and

Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version.

This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung鈥瞫 advanced CMOS process to realize high band-width, low power

consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high per-

formance microprocessor systems.

FEATURES

鈥?Part Identification

- KM41C4000D/D-L(5V, 1K Ref.)

- KM41V4000D/D-L(3.3V, 1K Ref.)

鈥?Fast Page Mode operation

鈥?CAS-before-RAS refresh capability

鈥?RAS-only and Hidden refresh capability

鈥?Self-refresh capability (3.3V, L-ver only)

鈥?Fast parallel test mode capability

鈥?TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

鈥?Common I/O using early write

鈥?/div>

Active Power Dissipation

Unit : mW

Speed

-5

-6

-7

3.3V

220

200

470

415

360

鈥?JEDEC Standard pinout

鈥?Available in 26(20)-pin SOJ 300mil and TSOP(II)

300mil packages

鈥?+5V鹵10% power supply(5V product)

鈥?+3.3V鹵0.3V power supply(3.3V product)

FUNCTIONAL BLOCK DIAGRAM

鈥?/div>

Refresh Cycles

Part

NO.

KM41C4000D

KM41V4000D

Refresh

cycle

Refresh Period

Normal

16ms

L-ver

128ms

Refresh Timer

Refresh Control

RAS

CAS

Control

Clocks

VBB Generator

Vcc

Vss

Row Decoder

Sense Amps & I/O

Data in

Buffer

鈥?/div>

Performance Range

Speed

-5

-6

-7

Refresh Counter

Memory Array

4,194,304 x1

Cells

RAC

50ns

60ns

70ns

CAC

15ns

Remark

5V only

5V/3.3V

A0~A9

Row Address Buffer

Col. Address Buffer

Column Decoder

90ns 35ns

15ns 110ns 40ns

20ns 130ns 45ns

Data out

Buffer

SAMSUNG ELECTRONICS CO., LTD.

reserves the right to

change products and specifications without notice.

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