KM416V4100B Datasheet

IC型號：
KM416V4100B
PDF描述：
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
文件大?。?/label>
766.68KB
PDF頁數(shù)：
35頁
芯片廠家：
SAMSUNG

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KM416V4000B, KM416V4100B

CMOS DRAM

4M x 16bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory

cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are

optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Fur-

thermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung鈥瞫

advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES

鈥?Part Identification

- KM416V4000B/B-L(3.3V, 8K Ref.)

- KM416V4100B/B-L(3.3V, 4K Ref.)

鈥?/div>

Active Power Dissipation

Unit : mW

Speed

-45

-5

-6

鈥?/div>

Refresh Cycles

Part

NO.

KM416V4000B*

KM416V4100B

Refresh

cycle

Refresh time

Normal

64ms

L-ver

128ms

RAS

UCAS

LCAS

鈥?Fast Page Mode operation

鈥?2CAS Byte/Word Read/Write operation

鈥?CAS-before-RAS refresh capability

鈥?RAS-only and Hidden refresh capability

鈥?Self-refresh capability (L-ver only)

鈥?Fast parallel test mode capability

鈥?LVTTL(3.3V) compatible inputs and outputs

鈥?Early Write or output enable controlled write

鈥?JEDEC Standard pinout

鈥?Available in Plastic TSOP(II) packages

鈥?+3.3V鹵0.3V power supply

468

432

396

360

324

288

FUNCTIONAL BLOCK DIAGRAM

Control

Clocks

Vcc

Vss

Lower

Data in

Buffer

Sense Amps & I/O

Lower

Data out

Buffer

Upper

Data in

Buffer

Upper

Data out

Buffer

VBB Generator

* Access mode & RAS only refresh mode

: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)

CAS-before-RAS & Hidden refresh mode

: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)

Refresh Timer

Refresh Control

Refresh Counter

Row Decoder

DQ0

DQ7

鈥?/div>

Performance Range

Speed

-45

-5

-6

Memory Array

4,194,304 x 16

Cells

DQ8

DQ15

RAC

45ns

50ns

60ns

CAC

12ns

13ns

15ns

80ns

90ns

110ns

31ns

35ns

40ns

A0~A12

(A0~A11)*1

A0~A8

(A0~A9)*1

Row Address Buffer

Col. Address Buffer

Column Decoder

Note) *1 : 4K Refresh

SAMSUNG ELECTRONICS CO., LTD.

reserves the right to

change products and specifications without notice.

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KM416V4100B Datasheet

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