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KM23C64000T Datasheet

  • KM23C64000T

  • 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM

  • 4頁

  • SAMSUNG   SAMSUNG

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KM23C64000T
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
FEATURES
鈥?/div>
Switchable organization
8,388,608 x 8(byte mode)
4,194,304 x 16(word mode)
鈥?/div>
Fast access time : 120ns(Max.)
鈥?/div>
Supply voltage : single +5V
鈥?/div>
Current consumption
Operating : 70mA(Max.)
Standby : 50碌A(chǔ)(Max.)
鈥?/div>
Fully static operation
鈥?/div>
All inputs and outputs TTL compatible
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Three state outputs
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Package : KM23C64000T : 44-TSOP2-400
CMOS MASK ROM
GENERAL DESCRIPTION
The KM23C64000T is a fully static mask programmable ROM
fabricated using silicon gate CMOS process technology, and is
organized either as 8,388,608 x 8 bit(byte mode) or as
4,194,304 x 16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23C64000T is packaged in a 44-TSOP2.
FUNCTIONAL BLOCK DIAGRAM
A
21
.
.
.
.
.
.
.
.
A
0
A
-1
. . .
CE
OE
BHE
CONTROL
LOGIC
Q
0
/Q
8
Q
7
/Q
15
X
BUFFERS
AND
DECODER
MEMORY CELL
MATRIX
(4,194,304x16/
8,388,608x8)
PIN CONFIGURATION
A
21
A
18
A
17
A
7
A
6
A
5
1
2
3
4
5
6
7
8
9
11
44 A
20
43 A
19
42 A
8
41 A
9
40 A
10
39 A
11
38 A
12
37 A
13
36 A
14
35 A
15
Y
BUFFERS
AND
DECODER
SENSE AMP.
BUFFERS
A
4
A
3
A
2
A
0
A
1
10
TSOP2
34 A
16
33 BHE
32 V
SS
31 Q
15
/A
-1
30 Q
7
29 Q
14
28 Q
6
27 Q
13
26 Q
5
25 Q
12
24 Q
4
23 V
CC
CE 12
V
SS
13
OE 14
Q
0
Q
8
Q
9
Q
2
Q
10
15
16
18
19
20
Q
1
17
Pin Name
A
0
- A
21
Q
0
- Q
14
Q
15
/A
-1
BHE
CE
OE
V
CC
V
SS
Pin Function
Address Inputs
Data Outputs
Output 15(Word mode)/
LSB Address(Byte mode)
Word/Byte selection
Chip Enable
Output Enable
Power (+5V)
Ground
Q
3
21
Q
11
22
KM23C64000T

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