鈾?/div>
Non-volatile storage of information during 10 years
Single supply (Ucc=4,75 B - 5,25 B)
On-chip voltage multiplier
On-chip generator of bulk biasing
Serial input/output I
2
C-bus
10 000 ERASE/WRITE cycles per byte;
Internal reprogramming (no external components)
Duration of the ERASE/WRITE cycle is 15 ms
Temperature range: 0
梅
+70
0
C
ELECTRICAL CHARACTERISTICS
Parameter
Supply current, mA
Output low voltage (SDA), V
High leakage current:
-on output (SDA),
碌A(chǔ)
-on inputs SCL, SDA,
碌A(chǔ)
-on inputs CS, TP1, TP2,碌A(chǔ)
Input capacitance, pF
Clock input frequency, kHz
Reprogramming cycle time, ms
Erase of die cycle time, ms
The number of E/W cycles on 1 byte
Input high voltage:
-inputs SDA, SCL, V
-inputs CS, TP1, TP2, V
Input low voltage:
-inputs SDA, SCL, V
-inputs CS, TP1, TP2, V
Conditions
U
CC
=5.25 B
I
OL
=3 mA
U
CC
=4.75B
U
OH
=5,25 B
U
IH
=5,25 B
U
IH
=5,25 B
U
I
= 0 B
Erase and Write
U
TP2
= 5,0 B
Symbol
I
CC0
U
OL
Min.
-
-
Max
20,0
0,4
I
LOH
I
LIH
I
LIH
C
I
f
SCL
t
PROG
t
ER
-
-
-
-
0
10,0
-
10 000
3,0
4,5
-
-
10,0
10,0
100,0
10,0
100
20,0
20,0
-
U
CC
U
CC
1,5
0,2
KK
U
IH
U
IL
PIN DESCRIPTION
SYMBOL
Uss
CS
TP1
TP2
SDA
SCL
TP3
Ucc
PIN
1
2
3
4
5
6
7
8
DESCRIPTION
GND
Chip selection
Testing pin
Testing pin (0V - normal mode, 5V
- chip erasing)
Informational line, input/output
Clock input
Testing pin, not connected
Supply Voltage
PIN ASSIGNMENT
Ucc
TP3
U
CS
1
2
8
7
TP1
3
4
6
5
SCL
SDA
TP2
1
1
2
