Infrared Emitting Diodes(GaAs)
KEL-3001A
DIMENSIONS
The KEL-3001A is GaAs infrared emitting diode that is designed
for high power, low forward voltage and high speed rise / fall time.
This device is optimized for speed and efficiency at emission
wavelength 940nm and has a high radient efficiency over a wide
range of forward current.
(Unit : mm)
FEATURES
鈥?940nm wavelength
鈥?Low forward voltage
鈥?High power and high reliability
鈥?Available for pulse operating
APPLICATIONS
鈥?IR Audio and Telephone
鈥?Communication
鈥?Optical Switch
鈥?Available for wireless digital data transmission
ABSOLUTE MAXIMUM RATINGS
Item
Power dissipation
Forward current
Pulse forward current *1
Reverse voltage
Operating temp.
Storage temp.
Soldering temp. *2
(Ta=25擄C)
Symbol
P
D
I
F
I
FP
V
R
Topr.
Tstg.
Tsol.
Ratings
75
50
0.5
5
-25 ~ +85
-30 ~ +85
240
Unit
mW
mA
A
V
擄C
擄C
擄C
*1. Duty ratio=1/100, pulse width=0.1ms
*2. Lead Soldering Temperature (3mm from case for 5sec).
ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol
Forward voltage
V
F
Reverse current
I
R
Capacitance
Ct
Radiant intensity
Po
Peak emission wavelength
Spectral bandwidth 50%
Half angle
位p
鈭單?/div>
鈭單?/div>
(Ta=25擄C)
Conditions
I
F
=50mA
V
R
=5V
f=1MHz, V=0V
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
Min.
-
-
-
5.0
-
-
-
Typ.
1.4
-
70
8.0
940
45
鹵 20
Max.
1.7
10
-
-
-
-
-
Unit
V
uA
pF
mW
nm
nm
deg.
1
2
