SEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES
KDV350E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
Low Series Resistance : r
S
=0.50
Small Package. (ESC Package)
(Max.)
C
1
E
2
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
R
T
j
T
stg
RATING
15
150
-55
150
UNIT
V
D
F
B
A
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.60 + 0.10
_ 0.10
1.20 +
_
0.80 + 0.10
_ 0.05
0.30 +
_
0.60 + 0.10
_
+ 0.05
0.13
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
SYMBOL
V
R
I
R
C
1V
C
4V
K
r
S
I
R
=1 A
V
R
=15V
V
R
=1V, f=1MHz
V
R
=4V, f=1MHz
C
1V
/C
4V
, f=1MHz
V
R
=1V, f=470MHz
TEST CONDITION
MIN.
15
-
15.0
5.3
2.8
-
TYP.
-
-
-
-
-
-
MAX.
-
10
17.5
6.3
-
0.5
UNIT
V
nA
pF
Marking
Type Name
UK
2000. 3. 7
Revision No : 0
1/2
1
2
