SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF Band Radio.
KDV245E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
High Capacitance Ratio : C
0.5V
/C
2.5V
=2.5(Typ.)
Low Series Resistance : r
s
=0.35
Useful for Small Size Tuner.
(Typ.)
CATHODE MARK
FEATURES
C
1
E
2
D
F
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
R
T
j
T
stg
RATING
10
150
-55 150
UNIT
V
1. ANODE
2. CATHODE
B
A
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.60 + 0.10
_
1.20 + 0.10
_ 0.10
0.80 +
_
0.30 + 0.05
_
+ 0.10
0.60
_
0.13 + 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
SYMBOL
V
R
I
R
C
0.5V
C
2.5V
K
r
S
I
R
=1 A
V
R
=10V
V
R
=0.5V, f=1MHz
V
R
=2.5V, f=1MHz
C
0.5V
/C
2.5V
, f=1MHz
V
R
=1V, f=470MHz
TEST CONDITION
MIN.
10
-
7.3
2.75
2.4
-
TYP.
-
-
-
-
2.5
0.35
MAX.
-
3
8.4
3.4
-
-
UNIT
V
nA
pF
Marking
Type Name
ED
2003. 1. 27
Revision No : 0
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