KDV214E Datasheet

IC型號(hào)：
KDV214E
PDF描述：
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV...
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358.04KB
PDF頁數(shù)：
2頁
芯片廠家：
KEC

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SEMICONDUCTOR

TECHNICAL DATA

TV TUNING.

FEATURES

銉籐ow

Series Resistance : r

=0.4鈩?Typ.)

銉籈xcellent

C-V Characteristics, and Small Tracking Error.

銉籙seful

for Small Size Tuner.

KDV214E

VARIABLE CAPACITANCE DIODE

SILICON EPITAXIAL PLANAR DIODE

CATHODE MARK

銉籋igh

Capacitance Ratio : C2V/C25V=6.5(Typ.)

MAXIMUM RATING (Ta=25鈩?

CHARACTERISTIC

Reverse Voltage

Peak Reverse Voltage

Junction Temperature

Storage Temperature Range

SYMBOL

stg

RATING

35 (R

=10k鈩?

125

-55錕?frac12;錕?25

UNIT

鈩?/div>

1. ANODE

2. CATHODE

DIM

MILLIMETERS

1.60 + 0.10

_ 0.10

1.20 +

0.80 + 0.10

_ 0.05

0.30 +

0.60 + 0.10

+ 0.05

0.13

ESC

ELECTRICAL CHARACTERISTICS (Ta=25鈩?

CHARACTERISTIC

Reverse Voltage

Reverse Current

Capacitance

Capacitance Ratio

Series Resistance

C(Max.)-C(Min.)

C(Min.)

=2~25V)

SYMBOL

25V

=5V, f=470MHz

=1渭

=28V

=2V, f=1MHz

=25V, f=1MHz

TEST CONDITION

MIN.

14.16

2.11

5.90

TYP.

6.50

0.4

MAX.

16.25

2.43

7.15

0.55

UNIT

鈩?/div>

Note : Available in matched group for capacitance to 2.5%.

鈮?.025

Marking

Type Name

2002. 6. 14

Revision No : 2

1/2

型號(hào)

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描述

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