SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION.
FEATURES
High Capacitance Ratio : C
1V
/C
5V
=5.0(Min.)
Excellent C-V Characteristics.
Variations of Capacitance Values is Little.
A
KDV1470
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
L
E
B
L
DIM
A
D
B
C
D
E
G
H
J
K
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
G
Small Package.
2
3
H
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
R
T
j
T
stg
RATING
16
150
UNIT
V
C
N
P
P
L
M
N
P
M
3
1. ANODE 1
-55 150
2. ANODE 2
3. CATHODE
2
1
K
SOT-23
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
A
B
C
CAPACITANCE (C
1V
)
65.80
68.27
70.74
69.25
71.72
74.20
Type Name
UNIT
pF
Marking
Grade
Lot No.
S3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Reverse Current
SYMBOL
V
R
I
R
C
1V
C
2V
Capacitance
C
3V
C
4.5V
C
5V
Capacitance Ratio
Series Resistance
K
r
S
I
R
=10 A
V
R
=10V
V
R
=1V, f=1MHz
V
R
=2V, f=1MHz
V
R
=3V, f=1MHz
V
R
=4.5V, f=1MHz
V
R
=5V, f=1MHz
C
1V
/C
5V
, f=1MHz
V
R
=1.5V, f=100MHz
TEST CONDITION
MIN.
16
-
65.8
-
-
12.0
-
5.0
-
TYP.
-
-
70
43
24
13.5
12.5
-
0.43
MAX.
-
50
74.2
-
-
14.8
-
-
0.5
pF
UNIT
V
nA
2002. 6. 25
Revision No : 1
J
1/2
1
2
