SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES
High Reliability.
Small surface mounting type (USC).
CATHODE MARK
B
1
KDS135
SILICON EPITAXIAL PLANAR DIODE
G
K
A
H
F
2
D
E
J
C
I
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
Pad dimension of 4 4mm
)
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
300
250
300
100
2
150*
150
-55 150
UNIT
V
V
mA
mA
A
mW
1. ANODE
2. CATHODE
M
M
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
MILLIMETERS
_
2.50 + 0.1
_
1.25 + 0.05
_
0.90 + 0.05
0.30+0.06/-0.04
_
1.70 + 0.05
MIN 0.17
_
0.126 + 0.03
0~0.1
1.0 MAX
_
0.15 + 0.05
_
0.4 + 0.05
2 +4/-2
4~6
USC
* Mounted on a glass epoxy cirvuit board of 20 20mm
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
SYMBOL
V
F
I
R(1)
I
R(2)
C
T
t
rr
TEST CONDITION
I
F
=100mA
V
R
=250V
V
R
=300V
V
R
=0V, f=1MHz
I
R
=30mA, I
F
=30mA
MIN.
-
-
-
-
-
TYP.
1.0
0.04
-
1.35
30
MAX.
1.2
0.2
100
3
100
UNIT
V
A
pF
nS
Marking
Type Name
JA
2001. 6. 11
Revision No : 0
L
1/2
1
2
