SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
CATHODE MARK
B
1
KDR784
SCHOTTKY BARRIER TYPE DIODE
G
FEATURES
Low Forward Voltage : V
F(3)
=0.42V(Typ.)
Small Package : USC.
K
A
H
E
2
D
J
C
I
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
pad dimension of 4 4mm.
)
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
30
30
300
100
1
200*
125
-55 125
UNIT
V
V
mA
mA
A
mW
1. ANODE
2. CATHODE
M
M
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
MILLIMETERS
_
2.50 + 0.1
_ 0.05
1.25 +
_
0.90 + 0.05
0.30+0.06/-0.04
_
1.70 + 0.05
MIN 0.17
_
0.126 + 0.03
0~0.1
1.0 MAX
_
0.15 + 0.05
_
0.4 + 0.05
2 +4/-2
4~6
USC
* : Mounted on a glass epoxy circuit board of 20 20mm,
Marking
Type Name
UU
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
I
R
C
T
I
F
=1mA
I
F
=5mA
I
F
=100mA
V
R
=30V
V
R
=1V, f=1MHz
TEST CONDITION
MIN.
-
-
-
-
-
TYP.
0.26
0.30
0.42
-
40
MAX.
0.35
0.40
0.55
15
-
A
pF
V
UNIT
2003. 2. 25
Revision No : 2
F
L
1/1
1
