SEMICONDUCTOR
TECHNICAL DATA
LOW POWER RECTIFICATION
FOR SWITCHING POWER SUPPLY.
CATHODE MARK
KDR412
SCHOTTKY BARRIER TYPE DIODE
B
1
G
FEATURES
Small Surface Mounting Type. (USC)
Low Forward Voltage : V
F
max=0.5V
High Reliability
K
A
H
E
2
D
J
C
I
CONSTRUCTION
Silicon epitaxial planar.
DIM
A
B
C
M
D
M
E
F
G
H
I
J
K
L
M
MILLIMETERS
_
2.50 + 0.1
_ 0.05
1.25 +
_
0.90 + 0.05
0.30+0.06/-0.04
_
1.70 + 0.05
MIN 0.17
_
0.126 + 0.03
0~0.1
1.0 MAX
_
0.15 + 0.05
_
0.4 + 0.05
2 +4/-2
4~6
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Peak Reverse Voltage
DC Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
RM
V
R
I
O
I
FSM
T
j
T
stg
RATING
40
20
0.5
3
125
-40 +125
UNIT
V
V
A
A
1. ANODE
2. CATHODE
USC
Marking
Type Name
U3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Forward Voltage
Reverse Current
Total Capacitance
SYMBOL
V
F
(1)
V
F
(2)
I
R
C
T
TEST CONDITION
I
F
=10mA
I
F
=500mA
V
R
=10V
V
R
=10V, f=1MHz
MIN.
-
-
-
-
TYP.
-
-
-
20
MAX.
0.3
0.5
30
-
UNIT
V
V
A
pF
2002. 10. 2
Revision No : 2
F
L
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