SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING.
KDR378
SCHOTTKY BARRIER TYPE DIODE
FEATURES
Low Forward Voltage : V
F
=0.24(Typ.) I
F
=5mA
E
M
B
M
2
D
3
DIM
A
B
C
D
E
G
H
1
MILLIMETERS
_
2.00 + 0.20
_
1.25 + 0.15
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
0.42 + 0.10
0.10 MIN
A
J
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive Peak Surge Current
Power Dissipation
Junction Temperature
Storage Temperature Range
pad dimension of 4 4mm.
)
SYMBOL
V
RRM
V
R
I
O
I
FSM
P
D
T
j
T
stg
RATING
15
10
0.1
1
200*
125
-55 125
UNIT
C
J
K
H
N
K
N
L
M
N
V
V
A
A
mW
L
3
1. ANODE 1
2. ANODE 2
3. CATHODE
2
1
* : Mounted on a glass epoxy circuit board of 20 20mm,
USM
Marking
X3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
I
R
C
T
I
F
=1mA
I
F
=5mA
I
F
=100mA
V
R
=10V
V
R
=0V, f=1MHz
TEST CONDITION
MIN.
-
-
-
-
-
TYP.
0.19
0.24
0.39
-
14
MAX.
-
-
0.50
20
30
A
pF
V
UNIT
2001. 11. 29
Revision No : 2
1/2
1
2
