SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Small Package : ESC.
CATHODE MARK
KDR367E
SCHOTTKY BARRIER TYPE DIODE
Low Forward Voltage : V
F(2)
=0.23V (Typ.)
C
1
E
2
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
pad dimension of 4 4mm.
)
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
15
10
200
100
1
150*
125
-55 125
UNIT
V
V
mA
mA
A
mW
D
F
B
A
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.60 + 0.10
_ 0.10
1.20 +
_
0.80 + 0.10
_
0.30 + 0.05
_
0.60 + 0.10
_
0.13 + 0.05
ESC
* : Mounted on a glass epoxy circuit board of 20 20mm,
Marking
Type Name
US
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
I
R
C
T
I
F
=1mA
I
F
=5mA
I
F
=100mA
V
R
=10V
V
R
=0V, f=1MHz
TEST CONDITION
MIN.
-
-
-
-
-
TYP.
0.18
0.23
0.35
-
20
MAX.
-
0.30
0.50
20
40
A
pF
V
UNIT
2003. 2. 25
Revision No : 1
1/2
1
2
