PDF預(yù)覽

• 1
• 2
• 3
• 4
• 5
• 6
• 7
• 8
• 9
• 10
• 11
• 12
• 13
• 14
• 15
• 16
• 17
• 18
• 19
• 20
• 21
• 22
• 23
• 24
• 25
• 26
• 27
• 28
• 29
• 30
• 31
• 32
• 33
• 34
• 35
• 36
• 37
• 38

K9T1G08U0M

Document Title

128M x 8 Bits NAND Flash Memory

FLASH MEMORY

Preliminary

Revision History

Revision No. History

0.0

0.1

0.2

0.3

0.4

0.5

Draft Date

Aug. 7th 2003

Oct. 20th 2003

Mar. 9th 2004

Apr. 24th 2004

May. 24th 2004

Oct. 25th 2004

Remark

Advanced

Preliminary

Preliminary

Preliminary

Preliminary

Preliminary

Initial issue.

tR is changed. [Old : 12碌s(Max.), New :15碌s(Max.)]

CE must be held low during tR added.

1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.

1. PKG(TSOP1, WSOP1) Dimension Change

1. Technical note is changed

2.Note1 of Program/Erase characteristics is added

Note : For more detailed features and specifications including FAQ, please refer to Samsung鈥檚 Flash web site.

http://www.samsung.com/Products/Semiconductor/

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

1

next

K9T1G08U0M相關(guān)型號(hào)PDF文件下載

• 型號(hào)
  版本
  描述
  廠商
  下載
• K9T1G08U0M
  英文版
  128M x 8 Bits NAND Flash Memory
  
  K9T1G08U0M
• K9T1G08U0M
  英文版
  128M x 8 Bits NAND Flash Memory
  SAMSUNG [S...
  K9T1G08U0M

您可能感興趣的PDF文件資料

• K9T1G08U0M
• K9T1G08U0M

熱門IC型號(hào)推薦

• KDS160E-RTK/P
• K9K8G08U0A-PCB0
• KA7808ETU
• K4S641632K-UC75
• KSC1623GMTF
• K9F4008WOA-TCBO
• K4X1G323PE-8GC6
• K9F2G08U0C-SCB0
• KXTF9-4100
• K4M28323LH-HN75
• K9F6408U0C-TCB0
• KTA1504S-Y-RTK