鈫?/div>
Main Array 2 cycles(Max.)
Spare Array 3 cycles(Max.)
3) Added CE don鈥?care mode during the data-loading and reading
t
April 10th 1999
Final
1.2
1) Revised real-time map-out algorithm(refer to technical notes)
2) Changed voltage-density model marking method on SmartMedia
Changed device name
- SMFV016 -> K9S2808V0M-SSB0
June 30th 1999
Final
1.3
Sep. 15th 1999
Final
1.4
1. Changed invalid block(s) marking method prior to shipping
July 17th 2000
- Physical format standard specifies that block status is defined by the
6th byte in the spare area.
Samsung makes sure that the first page of
every invalid block has 00h data at the column address of 517(4MB
SmartMedia and higher densities) or 261(2MB SmartMedia).
--> Physical format standard by SSFDC Forum specifies that for the
invalid blocks the 6th byte in the spare area (column address 517 for
4MB SmartMedia and higher densities, 261 for 2MB SmartMedia,
respectively) contains two or more "0" bits to indicate a invalid block.
FInal
Note : For more detailed features and specifications including FAQ, please refer to Samsung鈥?Flash web site.
s
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1