K9K2G08Q0M-YIB0 Datasheet

IC型號：
K9K2G08Q0M-YIB0
PDF描述：
Samsung semiconductor [256M x 8 Bit / 128M x 16 Bit NAND Fl...
文件大小：
732.98KB
芯片廠家：
SAMSUNG

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K9K2G16U0M-YCB0,YIB0,PCB0,PIB0

FLASH MEMORY

Document Title

256M x 8 Bit / 128M x 16 Bit

NAND Flash Memory

Revision History

Revision No

0.0

0.1

History

1. Initial issue

L(R/B) of 1.8V device is changed.

-min. Value: 7mA -->3mA

-typ. Value: 8mA -->4mA

Draft Date

Sep. 19.2001

Nov. 5. 2001

Remark

Advance

0.2

1. 5th cycle of ID is changed

: 40h --> 44h

Jan. 23.2002

0.3

1. Add WSOP Package Dimensions.

May. 29.2002

0.4

1. Max Icc value of 1.8V/3.3V device is changed.

- Max. value Icc1,Icc2,Icc3: 20mA --> 30mA (3.3V device)

- Max. value Icc1,Icc2,Icc3: 15mA --> 20mA (1.8V device)

Sep. 12.2002

0.5

1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)

2. Add the data protection Vcc guidence for 1.8V device - below about

1.1V. (Page 36)

Nov. 22.2002

0.6

0.7

The min. Vcc value 1.8V devices is changed.

K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V

Pb-free Package is added.

K9K2G08U0M-FCB0,FIB0

K9K2G08Q0M-PCB0,PIB0

K9K2G08U0M-PCB0,PIB0

K9K2G16U0M-PCB0,PIB0

K9K2G16Q0M-PCB0,PIB0

Errata is added.(Front Page)-K9K2GXXQ0M

tWC tWP tWH tRC tREH tRP tREA tCEA

Specification

45 25 15 50 15 25 30

Relaxed value 80 60 20 60 80 60 60

1. The 3rd Byte ID after 90h ID read command is don鈥?cared.

The 5th Byte ID after 90h ID read command is deleted.

1. Added Addressing method for program operation

Mar. 6.2003

Mar. 13.2003

0.8

Mar. 17.2003

0.9

1.0

Apr. 9. 2003

Jan. 27. 2004

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

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