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K9K1G08R0B

K9K1G08B0B

K9K1G08U0B

FLASH MEMORY

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Document Title

128M x 8 Bit NAND Flash Memory

Revision History

Revision No. History

0.0

0.1

Initial issue.

1. Note 1 ( Program/Erase Characteristics) is added( page 13 )

2. NAND Flash Technical Notes is changed.

-Invalid block -> initial invalid block ( page 15 )

-Error in write or read operation ( page 16 )

-Program Flow Chart ( page 16 )

3. Vcc range is changed

-1.7V~1.95V ->1.65V~1.95V

4. 2.7V device is added

5

. Multi plane operation and Copy-Back Program are not supported with 1.8V

device.

Draft Date

Mar. 17th 2003

Oct. 11th 2004

Remark

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Note : For more detailed features and specifications including FAQ, please refer to Samsung鈥檚 Flash web site.

http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near your office.

1

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