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K9K1G08Q0A Datasheet

  • K9K1G08Q0A

  • 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

  • 43頁

  • SAMSUNG   SAMSUNG

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K9K1G08Q0A K9K1G16Q0A
K9K1G08U0A K9K1G16U0A
Preliminary
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
0.1
Initial issue.
1. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
2. 63FBGA,1.8V product is added.
K9K1GXXQ0A-GCB0,GIB0,JCB0,JIB0
Errata is deleted.
AC parameters are changed.
Before
After
tWC tWH tWP tRC tREH tRP tREA tCEA
45 15 25 50 15 25 30
45
60 20 40 60 20 40 40
55
Draft Date
Mar. 17th 2003
Jun. 4th 2003
Remark
Preliminary
Preliminary
Aug. 1st 2003
0.2
Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung鈥?Flash web site.
s
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1

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