K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Preliminary
FLASH MEMORY
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0
0.1
History
1. Initial issue
1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 35)
Draft Date
Sep. 19.2001
Nov. 22. 2002
Remark
Advance
Preliminary
0.2
The min. Vcc value 1.8V devices is changed.
K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 6.2003
Preliminary
0.3
Few current value is changed.
Before
K9F2GXXQ0M
Typ.
I
SB
2
I
LI
I
LO
After
K9F2GXXQ0M
Typ.
I
SB
2
I
LI
I
LO
10
-
-
Max.
50
鹵10
鹵10
20
-
-
Max.
100
鹵20
鹵20
Apr. 2. 2003
Unit : us
K9F2GXXU0M
Typ.
20
-
-
Max.
100
鹵20
鹵20
Preliminary
K9F2GXXU0M
Typ.
10
-
-
Max.
50
鹵10
鹵10
Apr. 9. 2003
Preliminary
0.4
1. The 3rd Byte ID after 90h ID read command is don鈥?cared.
t
The 5th Byte ID after 90h ID read command is deleted.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
3. Pb-free Package is added.
K9F2G08Q0M-PCB0,PIB0
K9F2G08U0M-PCB0,PIB0
K9F2G16U0M-PCB0,PIB0
K9F2G16Q0M-PCB0,PIB0
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1