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K9F2808U0A- Datasheet

  • K9F2808U0A-

  • 16M x 8 Bit NAND Flash Memory

  • 352.89KB

  • 26頁(yè)

  • SAMSUNG   SAMSUNG

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K9F2808U0A-YCB0, K9F2808U0A-YIB0
Document Title
16M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0
0.1
0.2
Initial issue.
1. Revised real-time map-out algorithm(refer to technical notes)
1. Changed device name
- KM29U128AT -> K9F2808U0A-YCB0
- KM29U128AIT -> K9F2808U0A-YIB0
1. Changed sequential row read opera tion
-
The Sequential Read 1 and 2 operation is allowed only within a block
2. Changed invalid block(s) marking method prior to shipping
- The invalid block(s) information is written the 1st or 2nd page of the
invalid block(s) with 00h data
--->The
invalid block(s) status is defined by the 6th byte in the spare
area. Samsung makes sure that either the 1st or 2nd page of every
invalid block has 00h data at the column address of 517.
1. Changed endurance :
1million -> 100K program/erase cycles
2. Changed invalid block(s) marking method prior to shipping
- The invalid block(s) status is defined by the 6th byte in the spare
area. Samsung makes sure that either the 1st or 2nd page of every
invalid block has
00h data
at the column address of 517.
--->The invalid block(s) status is defined by the 6th byte in the spare
area. Samsung makes sure that either the 1st or 2nd page of every
invalid block has
non-FFh
data at the column address of 517.
1. Changed SE pin description
- SE is recommended to coupled to GND or Vcc and should not be
toggled during reading or programming.
Draft Date
April 10th 1999
July 23th 1999
Sep. 15th 1999
Remark
Advanced
Information
0.3
Mar. 21th 2000
Preliminary
0.4
May 15th 2000
Preliminary
0.5
July 17th 2000
Final
0.6
1. Changed don鈥?care mode in address cycles
t
Nov. 20th 2000
- *X can be "High" or "Low" => *L must be set to "Low"
2. Explain how pointer operation works in detail.
3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)
- The SE input controls the access of the spare area. When SE is high,
the spare area is not accessible for reading or programming. SE is rec
ommended to be coupled to GND or Vcc and should not be toggled
during reading or programming.
=> Connect this input pin to GND or set to static low state unless the
sequential read mode excluding spare area is used.
4. Updated operation for tRST timing
- If reset command(FFh) is written at Ready state, the device goes into
Busy for maximum 5us.
Note : For more detailed features and specifications including FAQ, please refer to Samsung鈥?Flash web site.
s
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1

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