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K9F1208R0B

K9F1208B0B

K9F1208U0B

Preliminary

FLASH MEMORY

Document Title

64M x 8 Bit NAND Flash Memory

Revision History

Revision No. History

0.0

0.1

Initial issue.

1. Note 1 ( Program/Erase Characteristics) is added( page 14 )

2. NAND Flash Technical Notes is changed.

-Invalid block -> initial invalid block ( page 16 )

-Error in write or read operation ( page 17 )

-Program Flow Chart ( page 17 )

3. Vcc range is changed

-2.4V~2.9V -> 2.5V~2.9V

-1.7V~1.95V ->1.65V~1.95V

4

. Multi plane operation and Copy-Back Program are not supported with 1.8V

device.

Draft Date

Apr. 24th 2004

Oct. 11th.2004

Remark

Advance

Preliminary

Note : For more detailed features and specifications including FAQ, please refer to Samsung鈥檚 Flash web site.

http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

1

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