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K6R1016C1D-UI10 Datasheet

  • K6R1016C1D-UI10

  • 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operati...

  • 9頁

  • SAMSUNG   SAMSUNG

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上傳產(chǎn)品規(guī)格書

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K6R1004C1D
Document Title
PRELIMINARY
PRELIMINARY
CMOS SRAM
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
Revision History
Rev. No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
History
Initial release with Preliminary.
Current modify
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
10ns
I
CC(Industrial)
12ns
Draft Data
June. 8. 2001
September. 9. 2001
December. 18. 2001
Previous
85mA
75mA
Current
75mA
65mA
June. 19. 2002
Final
Remark
Preliminary
Preliminary
Preliminary
Rev. 1.0
1. Final datasheet release.
2. Delete UB,LB releated AC characteristics and timing diagram.
1. Delete 12ns speed bin.
1. Add the Lead Free Package type.
Rev. 2.0
Rev. 3.0
July. 8. 2002
July. 26, 2004
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev. 3.0
July 2004

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