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K6R4004C1D

Document Title

1Mx4 Bit High Speed Static RAM(5.0V Operating).

Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY

CMOS SRAM

Revision History

Rev No.

Rev. 0.0

Rev. 0.1

History

Initial release with Preliminary.

Change Icc. Isb and Isb1

Item

I

CC(Commercial)

10ns

12ns

15ns

10ns

12ns

15ns

Previous

90mA

80mA

70mA

115mA

100mA

85mA

30mA

10mA

Current

65mA

55mA

45mA

85mA

75mA

65mA

20mA

5mA

Draft Data

September. 7. 2001

November, 3. 2001

Remark

Preliminary

Preliminary

I

CC(Industrial)

I

SB

I

SB1

Rev. 0.2

1. Correct AC parameters : Read & Write Cycle mA

2. Delete Low Ver.

3. Delete Data Retention Characteristics

1. Delete 15ns speed bin.

2. Change Icc for Industrial mode.

Item

10ns

I

CC(Industrial)

12ns

November, 3. 2001

Preliminary

Rev. 0.3

December, 18. 2001

Previous

85mA

75mA

Current

75mA

65mA

Preliminary

Rev. 1.0

1. Final datasheet release.

2. Delete 12ns speed bin.

3. Delete UB,LB releated AC characteristics and timing diagram.

4. Correct Read Cycle time waveform(2).

July, 09, 2002

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

Rev 1.0

July 2002

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  1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at ...
  
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  英文版
  1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at ...
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