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64ms refresh period (4K cycle).
Commercial Temperature Operation (-25擄C ~ 70擄C).
Extended Temperature Operation (-25擄C ~ 85擄C).
90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).
Mobile-SDRAM
GENERAL DESCRIPTION
The K4S56323PF is 268,435,456 bits synchronous high data
rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,
fabricated with SAMSUNG鈥檚 high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
ORDERING INFORMATION
Part No.
K4S56323PF-F(H)G/F75
K4S56323PF-F(H)G/F90
K4S56323PF-F(H)G/F1L
Max Freq.
133MHz(CL=3), 83MHz(CL2)
111MHz(CL=3), 83MHz(CL2)
111MHz(CL=3)
*1
, 66MHz(CL2)
LVCMOS
90 FBGA Pb
(Pb Free)
Interface
Package
- F(H)G : Low Power, Extended Temperature(-25擄C ~ 85擄C)
- F(H)F : Low Power, Commercial Temperature(-25擄C ~ 70擄C)
NOTES :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur
pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
Address configuration
Organization
8Mx32
Bank
BA0,BA1
Row
A0 - A11
Column Address
A0 - A8
1
September 2004