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K4S51153LF Datasheet

  • K4S51153LF

  • Samsung semiconductor [8M x 16Bit x 4 Banks Mobile SDRAM in...

  • SAMSUNG   SAMSUNG

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K4S51153LF - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
FEATURES
鈥?VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.
鈥?LVCMOS compatible with multiplexed address.
鈥?Four banks operation.
鈥?MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
鈥?EMRS cycle with address key programs.
鈥?All inputs are sampled at the positive going edge of the system
clock.
鈥?Burst read single-bit write operation.
鈥?Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
鈥?DQM for masking.
鈥?Auto refresh.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
64ms refresh period (8K cycle).
Commercial Temperature Operation (-25擄C ~ 70擄C).
2 /CS Support.
2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).
Mobile SDRAM
GENERAL DESCRIPTION
The K4S51153LF is 536,870,912 bits synchronous high data
rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,
fabricated with SAMSUNG鈥檚 high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
ORDERING INFORMATION
Part No.
K4S51163LF-Y(P)C/L/F75
K4S51163LF-Y(P)C/L/F1H
K4S51163LF-Y(P)C/L/F1L
Max Freq.
133MHz(CL3), 111MHz(CL2)
111MHz(CL2)
111MHz(CL=3)*1, 83MHz(CL2)
LVCMOS
54 FBGA Pb
(Pb Free)
Interface
Package
- Y(P)C/L/F : Normal / Low Power, Commercial Temperature(-25擄C ~ 70擄C)
NOTES :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur
pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
Address configuration
Organization
32M x16
Bank
BA0,BA1
Row
A0 - A12
Column Address
A0 - A8
1
September 2004

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