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K4M64163PH-RBF1L Datasheet

  • K4M64163PH-RBF1L

  • 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP

  • 116.54KB

  • 12頁

  • SAMSUNG   SAMSUNG

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K4M64163PH - R(B)G/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
FEATURES
鈥?1.8V power supply.
鈥?LVCMOS compatible with multiplexed address.
鈥?Four banks operation.
鈥?MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
鈥?EMRS cycle with address key programs.
鈥?All inputs are sampled at the positive going edge of the system
clock.
鈥?Burst read single-bit write operation.
鈥?Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
鈥?DQM for masking.
鈥?Auto refresh.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
64ms refresh period (4K cycle).
Commercial Temperature Operation (-25擄C ~ 70擄C).
Extended Temperature Operation (-25擄C ~ 85擄C).
54Balls CSP with 0.8mm ball pitch( -RXXX -Pb, -BXXX -Pb Free).
Mobile-SDRAM
GENERAL DESCRIPTION
The K4M64163PH is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,
fabricated with SAMSUNG鈥瞫 high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock, and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
ORDERING INFORMATION
Part No.
K4M64163PH-R(B)G/F75
K4M64163PH-R(B)G/F90
K4M64163PH-R(B)G/F1L
Max Freq.
133MHz(CL3), 83MHz(CL2)
111MHz(CL3), 83MHz(CL2)
111MHz(CL=3)
*1
, 66MHz(CL2)
LVCMOS
54 CSP Pb
(Pb Free)
Interface
Package
- R(B)G : Low Power, Extended Temperature(-25擄C ~ 85擄C)
- R(B)F : Low Power, Commercial Temperature(-25擄C ~ 70擄C)
Notes :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is
potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product
contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
1
December 2003

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