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K4E171611D Datasheet

  • K4E171611D

  • 1M x 16Bit CMOS Dynamic RAM with Extended Data Out

  • 35頁

  • SAMSUNG   SAMSUNG

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K4E171611D, K4E151611D
K4E171612D, K4E151612D
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K
Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features
of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-
refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung鈥?s advanced CMOS pro-
cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer,
personal computer and portable machines.
FEATURES
鈥?/div>
Part Identification
- K4E171611D-J(T) (5V, 4K Ref.)
- K4E151611D-J(T) (5V, 1K Ref.)
- K4E171612D-J(T) (3.3V, 4K Ref.)
- K4E151612D-J(T) (3.3V, 1K Ref.)
鈥?/div>
Active Power Dissipation
Speed
4K
-45
-50
-60
360
324
288
3.3V
1K
540
504
468
4K
550
495
440
Unit : mW
5V
1K
825
770
715
鈥?Extended Data Out Mode operation
(Fast Page Mode with Extended Data Out)
鈥?2 CAS Byte/Word Read/Write operation
鈥?CAS-before-RAS refresh capability
鈥?RAS-only and Hidden refresh capability
鈥?Self-refresh capability (L-ver only)
鈥?TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
鈥?Early Write or output enable controlled write
鈥?JEDEC Standard pinout
鈥?Available in plastic SOJ 400mil and TSOP(II) packages
鈥?Single +5V鹵10% power supply (5V product)
鈥?Single +3.3V鹵0.3V power supply (3.3V product)
鈥?/div>
Refresh Cycles
Part
NO.
K4E171611D
K4E171612D
K4E151611D
K4E151612D
V
CC
5V
3.3V
5V
3.3V
1K
16ms
Refresh
cycle
4K
Refresh period
Nor-
64ms
128ms
L-ver
RAS
UCAS
LCAS
W
FUNCTIONAL BLOCK DIAGRAM
Control
Clocks
Vcc
Vss
Lower
Data in
Buffer
Sense Amps & I/O
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
VBB Generator
Refresh Timer
Refresh Control
Row Decoder
DQ0
to
DQ7
鈥?/div>
Performance Range
Speed
-45
-50
-60
Refresh Counter
Memory Array
1,048,576 x16
Cells
OE
DQ8
to
DQ15
t
RAC
45ns
50ns
60ns
t
CAC
13ns
15ns
17ns
t
RC
69ns
84ns
104ns
t
HPC
16ns
20ns
25ns
Remark
5V/3.3V
5V/3.3V
5V/3.3V
A0-A11
(A0 - A9)
*1
A0 - A7
(A0 - A9)
*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Note)
*1
: 1K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.

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