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K2229 Datasheet

  • K2229

  • Silicon N Channel MOS Type Chopper Regulator, DC−DC Co...

  • 6頁

  • TOSHIBA

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2SK2229
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
鈭捪€鈭扢OSV)
2
2SK2229
Chopper Regulator, DC鈭扗C Converter and Motor Drive
Applications
4-V gate drive
Low drain鈭抯ource ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0.12
鈩?/div>
(typ.)
: |Y
fs
| = 5.0 S (typ.)
Unit: mm
: I
DSS
= 100 碌A(chǔ) (max) (V
DS
= 60 V)
: V
th
= 0.8~2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain鈭抯ource voltage
Drain鈭抔ate voltage (R
GS
= 20 k鈩?
Gate鈭抯ource voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
60
60
鹵20
5
20
1.3
129
5
0.13
150
鈭?5~150
Unit
V
V
V
A
A
W
mJ
A
mJ
擄C
擄C
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-8M1B
Weight: 0.54 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to
ambient
Symbol
R
th (ch鈭抋)
Max
96.1
Unit
擄C / W
Note 1: Ensure that the channel temperature does not exceed 150擄C.
Note 2: V
DD
= 25 V, T
ch
= 25擄C (initial), L = 7 mH, R
G
= 25
鈩?
I
AR
= 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2004-07-06

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