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K1B6416B6C Datasheet

  • K1B6416B6C

  • 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Mem...

  • 46頁(yè)

  • SAMSUNG   SAMSUNG

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K1B6416B6C
Document Title
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0
Initial Draft
- Design target
Revised
- Deleted Deep Power Down Mode support
Revised
- Changed product code from K1B6416B7C into K1B6416B6C
Draft Date
March 11, 2004
Remark
Advance
0.1
April 19, 2004
Advance
0.2
May 10, 2004
Advance
0.3
Revised
September 1, 2004 Preliminary
- Filled out Package type(54ball FBGA 6.0mm x 8.0mm)
- Changed Hi-Z parameters(tCHZ, tOHZ, tBHZ, tWZ) from Max.7ns
into Max.12ns and changed tHZ from Max.10ns into Max.12ns
- Updated "Fig.17 TIMING WAVEFORM OF WRITE CYCLE(1)" in
page 23
- Added comment on standby current(I
SB1
) measure condition as
"Standby mode is supposed to be set up after at least one active
operation after power up. I
SB1
is measured after 60ms from the time
when standby mode is set up."
- Added comment on restriction of the transition between Asynchro-
nous Write operation and Fully Synchronous bus operation(Page
10,11)
- Filled out I
SB1
value, I
SBP
value and I
CC2
value in Table 17(DC AND
OPERATING CHARACTERISTICS)
- Added Synchronous Operating Current(I
CC3
, Max.40mA)
- Added tCSHP(A)(CS high pulse width) parameter as Min.10ns in the
ASYNCHRONOUS AC CHARACTERISTICS
Revised
October 12, 2004
- Changed I
SB1
(< 40擄C) and I
SBP
(3/4 block, < 40擄C) from 100碌A(chǔ) into
120碌A(chǔ)
- Changed I
SBP
(1/2 block and 1/4 block, < 40擄C) from 95碌A(chǔ) into 115碌A(chǔ)
Finalized
January 20, 2005
Preliminary
0.4
1.0
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 1.0
January 2005

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