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JS28F256P30T85 Datasheet

  • JS28F256P30T85

  • Intel StrataFlash Embedded Memory

  • 102頁(yè)

  • INTEL   INTEL

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Intel StrataFlash Embedded Memory
(P30)
1-Gbit P30 Family
廬
Datasheet
Product Features
鈻?/div>
High performance
鈻?/div>
Security
鈥?85/88 ns initial access
鈥?One-Time Programmable Registers:
鈥?64 unique factory device identifier bits
鈥?40 MHz with zero wait states, 20 ns clock-to-
鈥?64 user-programmable OTP bits
data output synchronous-burst read mode
鈥?Additional 2048 user-programmable OTP bits
鈥?25 ns asynchronous-page read mode
鈥?Selectable OTP Space in Main Array:
鈥?4-, 8-, 16-, and continuous-word burst mode
鈥?4x32KB parameter blocks + 3x128KB main
鈥?Buffered Enhanced Factory Programming
blocks (top or bottom configuration)
(BEFP) at 5 碌s/byte (Typ)
鈥?Absolute write protection: V
PP
= V
SS
鈥?1.8 V buffered programming at 7 碌s/byte (Typ)
鈥?Power-transition erase/program lockout
鈻?/div>
Architecture
鈥?Individual zero-latency block locking
鈥?Multi-Level Cell Technology: Highest Density
鈥?Individual block lock-down
at Lowest Cost
鈻?/div>
Software
鈥?Asymmetrically-blocked architecture
鈥?20 碌s (Typ) program suspend
鈥?Four 32-KByte parameter blocks: top or
鈥?20 碌s (Typ) erase suspend
bottom configuration
鈥?Intel
廬
Flash Data Integrator optimized
鈥?128-KByte main blocks
鈥?Basic Command Set and Extended Command
鈻?/div>
Voltage and Power
Set compatible
鈥?V
CC
(core) voltage: 1.7 V 鈥?2.0 V
鈥?Common Flash Interface capable
鈥?V
CCQ
(I/O) voltage: 1.7 V 鈥?3.6 V
鈻?/div>
Density and Packaging
鈥?Standby current: 55 碌A(chǔ) (Typ) for 256-Mbit
鈥?64/128/256-Mbit densities in 56-Lead TSOP
鈥?4-Word synchronous read current:
package
13 mA (Typ) at 40 MHz
鈥?64/128/256/512-Mbit densities in 64-Ball
鈻?/div>
Quality and Reliability
Intel
廬
Easy BGA package
鈥?Operating temperature: 鈥?0 擄C to +85 擄C
鈥?1-Gbit in SCSP is 鈥?0 擄C to +85 擄C
鈥?64/128/256/512-Mbit and 1-Gbit densities in
Intel
廬
QUAD+ SCSP
鈥?Minimum 100,000 erase cycles per block
鈥?16-bit wide data bus
鈥?ETOX鈩?VIII process technology (130 nm)
The Intel StrataFlash
廬
Embedded Memory (P30) product is the latest generation of Intel
StrataFlash
廬
memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance synchronous-
burst read mode, fast asynchronous access times, low power, flexible security options, and three
industry standard package choices.
The P30 product family is manufactured using Intel
廬
130 nm ETOX鈩?VIII process technology.
Order Number: 306666, Revision: 001
April 2005

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