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JDV2S09FS Datasheet

  • JDV2S09FS

  • VCO for UHF band

  • 3頁(yè)

  • TOSHIBA

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JDV2S09FS
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S09FS
VCO for UHF band
鈥?/div>
鈥?/div>
鈥?/div>
High capacitance ratio: C
1V
/C
4V
= 2.1 (typ.)
Low series resistance: r
s
= 0.33
鈩?/div>
(typ.)
This device is suitable for use in a small-size tuner.
錕?frac12;錕斤拷½錕斤拷½錕斤緞錁烇緩錕?frac12;錕斤拷½錕?/div>
0.6鹵0.05
0.1
Unit: mm
A
0.8鹵0.05
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V
R
T
j
T
stg
Rating
10
150
鈭?5~150
Unit
0.07
M
V
擄C
擄C
0.1
A
0.2
鹵0.05
0.1鹵0.05
0.48 +0.02
-0.03
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
1-1L1A
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Symbol
V
R
I
R
C
1V
C
4V
C
1V
/C
4V
r
s
I
R
=
1
碌A(chǔ)
V
R
=
10 V
V
R
=
1 V, f
=
1 MHz
V
R
=
4 V, f
=
1 MHz
鈳?/div>
V
R
=
1 V, f
=
470 MHz
Test Condition
Weight: 0.0006 g (typ.)
Min
10
鈳?/div>
9.7
4.45
1.8
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
2.1
0.33
Max
鈳?/div>
3
11.1
5.45
鈳?/div>
0.45
Unit
V
nA
pF
鈳?/div>
鈩?/div>
Note: Signal level when capacitance is measured. V
sig
=
500 mVrms
Marking
B
1
2004-02-09
1.0鹵0.05

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