鈥?/div>
High Capacitance Ratio : C
1V
/C
4V
= 2.3 (typ.)
Low Series Resistance : r
s
= 0.42
鈩?/div>
(typ.)
This device is suitable for use in a small-size tuner.
錕?frac12;錕斤拷½錕斤拷½錕斤緞錁烇緩錕?frac12;錕斤拷½錕?/div>
0.6鹵0.05
0.1
Unit: mm
A
0.8鹵0.05
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V
R
T
j
T
stg
Rating
10
150
鈭?5~150
Unit
0.07
M
V
擄C
擄C
0.1
A
0.2
鹵0.05
0.1鹵0.05
0.48 +0.02
-0.03
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
1-1L1A
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Symbol
V
R
I
R
C
1V
C
4V
C
1V
/C
4V
r
s
I
R
=
1
碌A(chǔ)
V
R
=
10 V
V
R
=
1 V, f
=
1 MHz
V
R
=
4 V, f
=
1 MHz
鈳?/div>
V
R
=
1 V, f
=
470 MHz
Test Condition
Weight: 0.0006 g (typ.)
Min
10
鈳?/div>
4.0
1.85
2.0
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
4.5
2.0
2.3
0.42
Max
鈳?/div>
3
4.9
2.35
鈳?/div>
0.55
Unit
V
nA
pF
鈳?/div>
鈩?/div>
Note: Signal level when capacitance is measured: V
sig
=
500 mVrms
Marking
D
1
2004-02-09
1.0鹵0.05
JDV2S07FS相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
VCO for UHF band
TOSHIBA
-
英文版
VCO for UHF band
TOSHIBA [T...
-
英文版
TOSHIBA Diode Silicon Epitaxial Planar Type
TOSHIBA
-
英文版
TOSHIBA Diode Silicon Epitaxial Planar Type
TOSHIBA [T...
-
英文版
VCO for UHF band
TOSHIBA
-
英文版
VCO for UHF band
TOSHIBA [T...
-
英文版
Toshiba
-
英文版
VCO for UHF band
TOSHIBA
-
英文版
VCO for UHF band
TOSHIBA [T...
-
英文版
TOSHIBA DIODE Silicon Epitaxial Planar Type
TOSHIBA
-
英文版
TOSHIBA DIODE Silicon Epitaxial Planar Type
TOSHIBA [T...
-
英文版
VCO for UHF Band Radio
TOSHIBA
-
英文版
VCO for UHF Band Radio
TOSHIBA [T...
-
英文版
VCO for UHF Band Radio
TOSHIBA
-
英文版
VCO for UHF Band Radio
TOSHIBA [T...
-
英文版
VCO for UHF band
TOSHIBA
-
英文版
VCO for UHF band
TOSHIBA [T...
-
英文版
TOSHIBA DIODE Silicon Epitaxial Planar Type
TOSHIBA
-
英文版
TOSHIBA DIODE Silicon Epitaxial Planar Type
TOSHIBA [T...
-
英文版
VCO for UHF Band Radio
TOSHIBA
1
2
3
