鈥?/div>
Suitable for reducing set鈥檚 size as a result from enabling high-density
mounting due to 4-pin small packages.
1.2鹵0.05
1.2鹵0.05
0.9鹵0.05
Unit: mm
Low series resistance: r
s
= 1.0
惟
(typ.)
Low capacitance: C
T
= 0.3 pF (typ.)
0.8鹵0.05
Absolute Maximum Ratings
(Ta = 25擄C)
0.52鹵0.05
2
3
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
V
R
I
F
T
j
T
stg
Rating
30
50
150
鈭?5~150
Unit
V
mA
擄C
擄C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
1.ANODE1
2.ANODE2
3.CATHODE2
4.CATHODE1
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
1鈭?M1A
Weight: 0.0015 g(typ.)
Electrical Characteristics
(Ta = 25擄C)
Characteristics
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
Symbol
V
R
I
R
V
F
C
T
r
s
Test Condition
I
R
= 10
渭A
V
R
= 30 V
I
F
= 50 mA
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA, f = 100 MHz
Min
30
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
0.9
0.3
1.0
Max
鈳?/div>
0.1
0.94
0.4
1.5
Unit
V
渭A
V
pF
惟
Note: Signal level when capacitance is measured. V
sig
= 100 mVrms
Marking
4
TX
3
1
2
1
2007-11-01
0.12鹵0.05
0.2鹵0.05
1
4
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