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JDP2S02S Datasheet

  • JDP2S02S

  • UHF~VHF Band RF Attenuator Applications

  • 3頁(yè)

  • TOSHIBA

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JDP2S02S
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S02S
UHF~VHF Band RF Attenuator Applications
Unit: mm
路
路
路
Suitable for reducing set鈥檚 size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: r
s
= 1.0
鈩?/div>
(typ.)
Low capacitance: C
T
= 0.3 pF (typ.)
Maximum Ratings
(Ta = 25擄C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
V
R
I
F
T
j
T
stg
Rating
30
50
150
鈭?5~150
Unit
V
mA
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
1-1K1A
Electrical Characteristics
(Ta = 25擄C)
Characteristics
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
Symbol
V
R
I
R
V
F
C
T
r
s
Test Condition
I
R
= 10 碌A(chǔ)
V
R
= 30 V
I
F
= 50 mA
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA, f = 100 MHz
Weight: 0.0011 g
Min
30
戮
戮
戮
戮
Typ.
戮
戮
0.9
0.3
1.0
Max
戮
0.1
0.94
0.5
1.5
Unit
V
碌A(chǔ)
V
pF
鈩?/div>
Note: Signal level when capacitance is measured. V
sig
= 20 mVrms
Marking
2
1
2001-12-05

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