鈼?/div>
For wave detection
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristic
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
V
R
I
F
T
j
T
stg
Rating
4
25
125
鈭?5~125
Unit
V
mA
擄C
擄C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
1
SSM 1.
1
錕?frac12;錕斤緣錕?frac12;錕斤緞錁?/div>
ANODE1
2
3
錕?frac12;錕斤拷½錕斤拷½錕斤緞錁?/div>
2
3. CATHODE1/ANODE2
錕?frac12;錕斤拷½錕斤拷½錕斤緞錁?/div>
1/錕?frac12;錕斤緣錕?frac12;錕斤緞錁?2
鈥?/div>
鈥?/div>
1-2S1C
2.
CATHODE2
JEDEC
JEITA
TOSHIBA
Weight:0.0024g(typ.)
Electrical Characteristics
(Ta
=
25擄C)
Characteristic
Forward voltage
Forward current
Reverse current
Capacitance
Symbol
V
F
I
F
I
R
I
F
=
2 mA
V
F
=
0.5 V
V
R
=
0.5 V
Test Condition
Min
鈳?/div>
25
鈳?/div>
鈳?/div>
Typ.
0.25
鈳?/div>
鈳?/div>
0.6
Max
鈳?/div>
鈳?/div>
25
鈳?/div>
Unit
V
mA
uA
pF
C
T
V
R
= 0.2 V, f = 1 MHz
Marking
B
H
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
1
2007-11-01
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