鈥?/div>
Suitable for reducing set size through the use of a two-pin small
package supporting high-density mounting
Unit: mm
0.6鹵0.05
0.1
0.8鹵0.05
A
Characteristic
Maximum (peak) reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
V
R
I
F
T
j
T
stg
Rating
10
10
125
鈭?5~125
Unit
V
mA
擄C
擄C
0.07
M
0.1
A
0.2
鹵0.05
0.1鹵0.05
0.48 +0.02
-0.03
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
1-1L1A
Weight: 0.0006 g (typ.)
Electrical Characteristics
(Ta
=
25擄C)
Characteristic
Forward voltage
Forward current
Reverse current
Capacitance
Symbol
V
F
I
F
I
R
C
T
I
F
=
1 mA
V
F
=
0.5 V
V
R
=
0.5 V
V
R
=
0.2 V, f
=
1 MHz
Test Condition
Min
鈳?/div>
2
鈳?/div>
鈳?/div>
Typ.
0.24
鈳?/div>
鈳?/div>
0.3
Max
鈳?/div>
鈳?/div>
25
鈳?/div>
Unit
V
mA
渭A
pF
Note: Signal level when capacitance is measured: Vsig
=
20 mVrms
Marking
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
T
1
2007-11-01
1.0鹵0.05
Absolute Maximum Ratings
(Ta
=
25擄C)
錕?frac12;錕斤拷½錕斤拷½錕斤緞錁烇緩錕?frac12;錕斤拷½錕?/div>
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